Stereo-Electronic Effects in Tunneling Junctions: Revisiting the Platform

Interfacial capacitance effects in magnetic tunneling junctions

We have fabricated magnetic tunneling junctions by oxidizing a wedge-shaped aluminum layer to produce junctions with ideal oxidized as well as under and over oxidized junctions on a single wafer. By investigating the capacitance spectra, we are able to study the effects due to interface charge accumulation. The electron–electron interaction among accumulated interface charges leads to a voltage...

Spin effects in single-electron tunneling in magnetic junctions

Spin effects in single-electron tunneling in magnetic junctions J. Martinek, J.Barnaś, G. Micha lek, B.R. Bu lka and A. Fert 1 Institute of Molecular Physics, Polish Academy of Sciences, ul. Smoluchowskiego 17, 60-179 Poznań, Poland 2 Department of Physics, A. Mickiewicz University, ul. Umultowska 85, 61-614 Poznań, Poland 3 Unite Mixte de Physique CNRS/Thomson, Domaine de Corbeville, 91-404 Or...

Quantum effects in small-capacitance high temperature superconducting tunneling junctions

Tunneling anisotropic magnetoresistance in Fe/GaAs/Au junctions: orbital effects

We report experiments on epitaxially grown Fe/GaAs/Au tunnel junctions demonstrating that the tunneling anisotropic magnetoresistance (TAMR) effect can be controlled by a magnetic field. Theoretical modelling shows that the interplay of the orbital effects of a magnetic field and the Dresselhaus spin-orbit coupling in the GaAs barrier leads to an independent contribution to the TAMR effect with...

Single Electron Tunneling Junctions

This paper and its associated Python programs explore the dynamics of single electron tunneling junction (SETJ) circuits. SETJs can potentially be used as nonlinear circuit elements to implement new paradigms for information processing. I show that an isolated SETJ circuit with a constant bias voltage and sinusoidal pump offset can produce a variety of interesting nonlinear behavior. By adjusti...